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 CMOSH2-4L SURFACE MOUNT HIGH CURRENT, LOW VF SILICON SCHOTTKY DIODE
Central
DESCRIPTION:
TM
Semiconductor Corp.
The CENTRAL SEMICONDUCTOR CMOSH2-4L is a high current, low VF silicon Schottky diode in an SOD-523 surface mount package. This device offers a VF as low as 0.33 volts and is designed for small signal general purpose applications where size and low loss is required. MARKING CODE: 4L
SOD-523 CASE
MAXIMUM RATINGS: (TA=25C) Peak Repetitive Reverse Voltage Continuous Forward Current Peak Repetitive Forward Current Forward Surge Current, tp=10ms Power Dissipation Operating and Storage Junction Temperature Thermal Resistance TJ, Tstg JA (TA=25C unless otherwise noted) MIN -65 to +150 500 C C/W SYMBOL VRRM IF IFRM IFSM PD 40 200 350 1.0 250 UNITS V mA mA A mW
ELECTRICAL CHARACTERISTICS: SYMBOL IR BVR VF VF VF CT trr TEST CONDITIONS VR=20V IR=100A IF=10mA IF=100mA IF=200mA VR=4.0V, f=1.0MHz
TYP 11
MAX 50 0.325 0.4 0.5 10 5.0
UNITS A V V V V pF ns
40
53 0.24 0.35 0.42 8.5 4.0
IF=IR=10mA, Irr=1.0mA, RL=100
R2 (17-September 2004)
Central
TM
CMOSH2-4L SURFACE MOUNT HIGH CURRENT, LOW VF SILICON SCHOTTKY DIODE
Semiconductor Corp.
SOD-523 CASE - MECHANICAL OUTLINE
LEAD CODE: 1) Cathode 2) Anode
MARKING CODE: 4L
R2 (17-September 2004)


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